AlGaAs/GaAs solar cell with back-surface alternating contacts (GaAs BAC solar cell)
作者： Sherif Michael , Joseph E. O'Connor
DOI:
关键词: Optoelectronics 、 Heterojunction 、 Doping 、 Solar irradiance 、 Charge carrier 、 Conductivity 、 Materials science 、 Solar cell 、 Layer (electronics) 、 Common emitter
摘要: The disclosure provides a solar cell design featuring p-or-n type GaAs with alternating p-n junction regions on the back-surface of cell, opposite incident irradiance. Various layers are interfaced together to collect charge carriers, and thin layer AlGaAs is applied front back surfaces prevent recombination carriers. In some embodiments, layered an doped structure generally window about 20 nm 4×(10 18 ) cm −3 , absorption 2000 17 emitter 150 1×(10 heterojunction 40 3×(10 emitter-contact 19 . Additionally, BSF BSF-contact each have depth respectively. layer, conductivity layer.
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