Transient photodecay measurements as a probe of the density of localized states in amorphous semiconductors

作者: M. Silver , Eric Snow , David Adler

DOI: 10.1016/0038-1098(85)90366-7

关键词: PhotoconductivityYield (chemistry)Condensed matter physicsPhotocurrentExponential functionSpectroscopyMolecular physicsDensity of statesElectronic structureChemistryTransient (oscillation)

摘要: Abstract We show that structure in the density of localized states an amorphous semiconductor beyond apparently ubiquitous exponential band tails yield deviations from usual power-law decay photocurrent, i(t) ∝ tα−1, which can be described analytically. With our expression, dispersive-transport results deconvoluted to provide a spectroscopy localized-state distribution when well-defined defect centers and are simultaneously present.

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