Microstripline Transient Photocurrents: A Probe of Carrier Thermalization and Band-Tail State Densities in Amorphous Semiconductors

摘要: Much progress has been made concerning the general features of carrier transport and thermalization mechanisms in amorphous semiconductors from time-resolved studies photocurrents, photoluminescence photoinduced absorption. A common feature all these measurements is observation anomolous dispersion dynamics characterized by a power-law time decay which generally thought to derive an exponential distribution (energy) band-tail states procedes multiple trapping (MT). However, energy hopping sites will also give rise decay. Therefore, determination operative difficult problem compounded uncertainty regarding actual near band edges whether or not any structure exists. The purpose this paper present new transient photocurrent a-Se a-Si:H with improved experimental resolution allows one examine nature close edges.