Symmetry analysis of the RHEED patterns from the Si(001)−2 × 1 surfaces

摘要: Abstract Experimental and theoretical studies of the Si(001)−2×1 reconstruction are reviewed. The review indicates that a technique, which is sensitive fast enough to detect basic symmetry surface, seems still unavailable local density approximation (LDA) adopted in calculations makes it difficult determine electronic property surface: metallic or semiconducting. distinct features reflection high-energy electron diffraction (RHEED) technique shows clearly has role resolving controversies over reconstruction. multislice formalism Cowley Moodie with recently developed edge-patching method been applied analyses several experimental RHEED patterns from surface. calculation results reject static buckled model for also show information one three possible symmetrical models surface (namely ‘inherent symmetry’, ‘individual-dimer-random-symmetry’ ‘domain-random-symmetry’) closest true structure can be found patterns. indicate intensity (symmetry regarding intensities rather than geometrical locations spots) pattern very variations