Preparation of conducting and transparent thin films of tin‐doped indium oxide by magnetron sputtering
作者： M. Buchanan , J. B. Webb , D. F. Williams
DOI: 10.1063/1.91829
关键词: Chemical vapor deposition 、 Materials science 、 Torr 、 Sputter deposition 、 Thin film 、 Optoelectronics 、 Metallurgy 、 Indium 、 Tin 、 Sputtering 、 Oxide
摘要: High‐quality 800‐A‐thick films of tin‐doped indium oxide have been prepared by magnetron sputtering. It is shown that with low resistivity (∼4×10−4 Ω cm) and high optical transmission (≳85% between 4000 8000 A) can be on low‐temperature (40–180 °C) substrates O2 partial pressures (2–7)×10−5 Torr.
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