Fabrication of Geiger mode avalanche photodiodes
作者： W.J. Kindt , H.W. van Zeijl
DOI: 10.1109/NSSMIC.1997.672597
关键词: Biasing 、 CMOS 、 Nuclear electronics 、 Single-photon avalanche diode 、 Avalanche diode 、 Optoelectronics 、 Depletion region 、 Materials science 、 Geiger counter 、 Avalanche photodiode
摘要: As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, individual pixels are made. A CMOS compatible technology is used, to allow future integration in an array with readout electronics. model afterpulsing presented that relates probability concentration and capture cross section traps depletion layer. Also trap assisted tunneling used explain bias voltage temperature dependence dark count rate. Measured results on fabricated devices compared described theory.
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