Advanced program verify for page mode flash memory
作者： Ray-Lin Wan , Kota Soejima , Kong-Mou Liou , Tien-Ler Lin , Chun-Hsiung Hung
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摘要: Flash EEPROM cell and array designs, methods for programming the same result in efficient accurate of a flash chip. The chip comprises memory (170) including at least M rows N columns cells. word lines (172) are each coupled to cells one A plurality bit (174) page buffer (190) supplies input data Write control circuitry voltages response stored (191). Verify circuity automatically verifies by resetting bits which passes.
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