SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
作者： Masuoka Fujio , Nakamura Hiroki
DOI:
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摘要: A semiconductor device includes a first fin-shaped layer on substrate, insulating film around the layer, pillar-shaped gate line formed and extending in direction perpendicular to second diffusion disposed lower portion of third surrounding an upper contact electrode film, that connects magnetic tunnel junction memory element electrode.
lens.org 参考文章(33)
Dureseti Chidambarrao, Jochen Beintner, Ramachandra Divkaruni, Vertical Fin-FET MOS devices ,(2004)
Hang-Ting Lue, 3d nand flash memory ,(2013)
Hongsun Hwang, Sua Kim, Jin Ho Kim, Sangbo Lee, Chulwoo Park, Semiconductor memory devices including vertical transistor structures ,(2012)
Philippe M. Vereecken, Gonzalo Fuentes Iriarte, Anne Verhulst, Karen Maex, Elongate nanostructure semiconductor device ,(2005)
Hiroki Nakamura, Fujio Masuoka, Method for producing semiconductor device and semiconductor device ,(2015)
Nima Mokhlesi, Roy Scheuerlein, Three dimensional NAND memory ,(2007)
Daniel J. Connelly, Carl Faulkner, Daniel E. Grupp, Transistor with workfunction-induced charge layer ,(2004)
KyungTae Nam, Youngnam Hwang, Ki Joon Kim, Method of fabricating resistance variable memory device and devices and systems formed thereby ,(2012)
晃寛 仁田山, 英明 青地, 竜太 勝又, Akihiro Nitayama, Hideaki Aochi, Hiroyasu Tanaka, Masaru Kito, 啓安 田中, Ryuta Katsumata, Takashi Kito, 大 木藤, 傑 鬼頭, Non-volatile semiconductor memory device and manufacturing method therefor ,(2006)
Yoshinobu Toyama, 義信 外山, Structure of ldd type mos transistor and forming method ,(1998)