Semiconductor device with a barrier layer formed by electromigration
作者： Takuya Kadoguchi , Naoya Take
DOI:
关键词: Intermetallic 、 Electromigration 、 Semiconductor device 、 Soldering 、 Electrode 、 Layer (electronics) 、 Composite material 、 Barrier layer 、 Diode 、 Materials science
摘要: A semiconductor device (10, 50) includes a element (20, 70, 80, 90, 100) and an electrically conductive member (14, 66, 68, 74, 84). The (e.g. diode or IGBT (70, 80)) is configured to allow electric current flow from first electrode (21, 71, 81, 91, 101) second (22, 72, 82, 92, 102) prevent flowing the 101). 84) joined with (e.g., cathode of emitter via solder joint layer (34, 77, 87, 98, 108). Surface in contact 108) mainly comprises nickel, surface copper. compound layers (34a, 77a, 87a, 98a, 108a, 34c, 77c, 87c, 98c, 108c). 108a) located at interface nickel-tin based intermetallic compound. (34c, 108c) copper-tin When electrons toward 100), that configures moves due electromigration, deposited on 108a). Consequently, barrier (34d, 77d, 87d, 98d, 108d) formed
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