Semiconductor device and method of manufacturing semiconductor device

作者: Satoshi Uno , Hideaki Tsuchiya , Shinji Yokogawa

DOI:

关键词:

摘要: A semiconductor chip SC includes an electrode pad PAD. Cu pillar PIL is formed on the In addition, interconnect substrate INT a connection terminal TER. The TER contains Cu. For example, of Cu, and formed, for in land shape. However, may not be are connected to each other through solder layer SOL. SOL Sn. Ni NIL either or minimum value L thickness equal less than 20 μm.

参考文章(6)
Chen-Shien Chen, Yao-Chun Chuang, Chen-Cheng Kuo, Ching-Wen Hsiao, Methods and Apparatus for Robust Flip Chip Interconnections ,(2010)
Kuo-Ching Hsu, Cheng-Lin Huang, Ying-Ching Shih, Shin-puu Jeng, Cheng-chieh Hsieh, Chin-Fu Kao, Shang-Yun Hou, Jing-Cheng Lin, Chen-Hua Yu, Po-Hoa Tsai, Connector Design for Packaging Integrated Circuits ,(2012)
W.H. Wu, H.L. Chung, C.N. Chen, C.E. Ho, The Influence of Current Direction on the Cu-Ni Cross-Interaction in Cu/Sn/Ni Diffusion Couples Journal of Electronic Materials. ,vol. 38, pp. 2563- 2572 ,(2009) , 10.1007/S11664-009-0876-2
Yoshimichi Sogawa, Nobuaki Takahashi, Takao Yamazaki, Electronic component, semiconductor package, and electronic device ,(2007)
He Kunyao, Gong Zhenyue, Bottom buffering metal lug structure ,(2003)
Masamitsu Ikumo, Tadahiro Okamoto, Eiji Watanabe, Semiconductor device and semiconductor-device manufacturing method ,(2005)