Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections
作者： Kei Murayama , Mitsuhiro Aizawa , Takashi Kurihara
DOI: 10.1109/ICSJ.2014.7009612
关键词:
摘要: Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of (dia. 25 micro meter), maximum increasing-rate resistance was significant less than that larger seized structure (Dia. 75 meter).
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