Magnetic field dependence of the specific heat of heavily doped n-type silicon
作者： F. Heiniger , A. Paoli , F.T. Hedgcock
DOI: 10.1016/0304-8853(75)90145-6
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摘要: Abstract The low temperature specific heat of an n-type phosphorous doped silicon sample containing 5 × 10 18 charge carriers/cm 3 in zero magnetic field and a 28.5 kGauss has been measured. Within the experimental accuracy experiments no contribution to detected. This result is discussed light recent E.S.R. on same impurity banded sample.
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