Magnetic field dependence of the specific heat of heavily phosphorus doped silicon
作者： N. Kobayashi , S. Ikehata , S. Kobayashi , W. Sasaki
DOI: 10.1016/0038-1098(79)90850-0
关键词: Condensed matter physics 、 Silicon 、 Specific heat 、 Phosphorus doped 、 Phosphorus concentration 、 Magnetic field 、 Materials science 、 Metal
摘要: Abstract The specific heat of phosphorus doped silicon was measured at temperatures 0.1 T K in external magnetic fields 0 ≦ H ext 38 kOe . concentration the samples ranges from 5.3 × 10 17 to 8.9 18 cm −3 field dependence observed just metallic as well non-metallic ones. metal—non-metal transition is discussed on basis Anderson localized states with correlations.
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