Static Magnetic Susceptibility of Si : P across the Metal-Insulator Transition
作者： Youiti Ootuka , Noriaki Matsunaga
DOI: 10.1143/JPSJ.59.1801
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摘要: The static magnetic susceptibility of phosphorus doped silicon is measured over the temperature range from 10 mK to 4.2 K at concentrations 5.3×10 17 2.8×10 19 cm -3 . paramagnetic deviation observed for samples N ≤4.5×10 18 low temperatures and donor χ D varies continuously across metal-insulator transition. dependence roughly described by T - a law lightly metallic as well non-metallic ones. results are discussed in connection with theories experiments ESR specific heat.
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