Heavily Doped Semiconductors: Magnetic Moments, Electron-Electron Interactions and the MetalInsulator Transition
作者： H. V. Löhneysen
DOI: 10.1007/978-94-010-0213-4_15
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摘要: Electron localization in a metal, ultimately leading to metal-insulator transition (MIT), can occur because of disorder (Anderson transition) or electron-electron interactions (Mott-Hubbard transition). Both effects play role heavily doped semiconductors which have become prototype systems for the study MIT. In this review we focus on phosphorus-doped Si. The MIT Si:P be tuned by varying P concentration — barely insulating samples application uniaxial stress S. continuous tuning allows observation dynamic scaling σ(T, S) and hence reliable determination critical exponent μ extrapolated zerotemperature conductivity σ(0) ~∣ S c ∣μ, i.e. = 1, dynamical z 3.
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