Magnetic field dependence of the specific heat of ‘just metallic’ Si : P
作者： J. P. Harrison , J. R. Marko
DOI: 10.1080/14786437608222051
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摘要: Abstract The specific heat of two samples phosphorus doped silicon has been measured from ∼ 0-1 to 1 K in zero field and a 2-2 Tesla. One sample which was ‘just insulating’ (1–8 × 1018 phosphorus/cm3) showed large change heat, negative below 0-5 positive above. other metallic’ (5 phosphorus/cm3); there no the within scatter ±3% data. It is concluded that inhomogeneity model, localized delocalized donor electrons coexisting, not valid for semiconductor.
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