Electron-Spin-Resonance Studies of Heavily Phosphorus-Doped Silicon

摘要: The paramagnetic susceptibility $\ensuremath{\chi}$ and relaxation time ${T}_{1}$ of phosphorus-doped silicon have been investigated in the temperature range between 1. 5 100 \ifmmode^\circ\else\textdegree\fi{}K by means 2- 9-GHz electron-spin-resonance (ESR) methods. dependence is found to be appreciable even at temperatures far below degeneracy for samples donor concentrations 4. 9 \ensuremath{\sim} 16 \ifmmode\times\else\texttimes\fi{} ${10}^{18}$ ${\mathrm{cm}}^{\ensuremath{-}3}$, where metallic-impurity conduction observed; moreover, these samples, ${{T}_{1}}^{\ensuremath{-}1}$ shows a linear dependence. From analysis change ESR intensities, it concluded that should composed two parts: contribution Curie paramagnetism due localized magnetic moments Pauli electrons. concentration each part qualitative agreement with results Mikoshiba's inhomogeneity model. interpreted as interaction electrons, Hasegawa's theory dilute alloy systems applied. are also compared those static-susceptibility measurements.