NMR Study on Compensated Si:P
作者： Takao Mori , Yoshihiro Shimazu , Seiichiro Ikehata
DOI: 10.1143/JPSJ.62.3172
关键词:
摘要: We investigated the effect of compensation on electronic properties heavily phosphorus doped silicon. A sample just in metallic region was compensated by irradiation with fast neutrons to intermediate region. detailed study 29 Si NMR (Knight shift, spin-lattice relaxation time T 1 ) carried out together a measurement static magnetic susceptibility. obtained result that our samples Knight shift becomes larger than uncompensated case. Coupled results and susceptibility we conclude as donor wave function extends spatially. The measurements were made temperature 0.5–0.04 K.
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