Hopping conduction in phosphorus-doped silicon

作者: W. Sasaki

DOI: 10.1080/13642818508240613

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摘要: Abstract Electrical resistivity and Hall effect have been measured on phosphorus-doped silicon with Compensation ratio K ranging from 0 to 0·98. The experimental results are analysed a view clarifying the mechanism of hopping conduction. By comparing plots versus temperature for these samples, it is suggested that can be interpreted in terms variable-range if one assumes structure around Fermi level band. observed region conduction discussed percolative picture

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