Impurity‐band transport near the metal–insulator transition in ZnSe epilayers grown by molecular beam epitaxy

摘要: Electrical transport is studied in a number of ZnSe epilayers with donor concentrations the range 1–3×1017 cm−3. Hall effect data are taken over temperature 10–300 K, and magnetoresistance 10–50 K. Transport shown to be consistent two‐carrier model, second species being identified an impurity band distinct from conduction band. At low temperature, conductivity σ exhibits log σ∝−(T0/T)1/4 behavior, samples show negative magnetoresistance. Moreover, both parameter T0 tend toward zero as dopant concentration increases that metal–insulator transition.Electrical transition.