Low‐temperature conductivity of epitaxial ZnSe in the impurity band regime
作者： M. Vaziri
DOI: 10.1063/1.112641
关键词:
摘要: Low‐temperature conductivity of several samples ZnSe grown by molecular‐beam epitaxy has been measured. The data indicate that for with carrier concentration below or near Nc, metal insulator transition, the obeys σ=σ0 exp[−(T0/T)s] at low temperatures s=1/2. This behavior is a characteristic variable‐range hopping conduction in presence Coulomb gap.
scitation.org
core.ac.uk
harvard.edu
aip.org
sci-hub.se 参考文章(10)
Michael Pollak, A. L. Efros, Electron-electron interactions in disordered systems North-Holland , Sole distributors for the U.S.A. and Canada, Elsevier Science Publishing Co.. ,(1985)
Boris I. Shklovskii, Alex L. Efros, Electronic properties of doped semiconductors ,(1984)
M. Vaziri, Electrical and optical characterization of molecular-beam epitaxy grown Ga-doped ZnSe. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 7, pp. 253- 258 ,(1989) , 10.1116/1.584728
D Walsh, K Mazuruk, M Benzaquen, P Weissfloch, A new look at ZnSe/GaAs heterostructures Semiconductor Science and Technology. ,vol. 3, pp. 116- 119 ,(1988) , 10.1088/0268-1242/3/2/007
H. E. Ruda, A theoretical analysis of electron transport in ZnSe Journal of Applied Physics. ,vol. 59, pp. 1220- 1231 ,(1986) , 10.1063/1.336509
N.F. Mott, Conduction in glasses containing transition metal ions Journal of Non-Crystalline Solids. ,vol. 1, pp. 1- 17 ,(1968) , 10.1016/0022-3093(68)90002-1
T. Marshall, J. Gaines, Impurity‐band transport near the metal–insulator transition in ZnSe epilayers grown by molecular beam epitaxy Applied Physics Letters. ,vol. 56, pp. 2669- 2671 ,(1990) , 10.1063/1.102826
A L Efros, B I Shklovskii, Coulomb gap and low temperature conductivity of disordered systems Journal of Physics C: Solid State Physics. ,vol. 8, pp. 003- ,(1975) , 10.1088/0022-3719/8/4/003
F. Tremblay, M. Pepper, D. Ritchie, D. C. Peacock, J. E. F. Frost, G. A. C. Jones, Negative magnetoresistance in the variable-range-hopping regime in n-type GaAs Physical Review B. ,vol. 39, pp. 8059- 8061 ,(1989) , 10.1103/PHYSREVB.39.8059
Youzhu Zhang, Oeihua Dai, Miguel Levy, M. P. Sarachik, Probind the Coulomb Gap in Insulating n-Type CdSe. Physical Review Letters. ,vol. 64, pp. 2687- 2690 ,(1990) , 10.1103/PHYSREVLETT.64.2687