作者: Youiti Ootuka , Hideyuki Matsuoka , Shun-ichi Kobayashi
DOI: 10.1007/978-1-4613-1841-5_12
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摘要: We measured the negative magnetoresistance in Ge:Sb at low temperatures, and derived inelastic scattering time applying localization theory. The shows, above liquid He T3/2dependence which is due to electron-electron interaction dirty medium. Below about 1K temperature dependence weaker. It not explained by spin independent of temperature, indicates or having weak variation.