作者: Masashi Sahashi , Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Hitoshi Iwasaki
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摘要: A magnetoresistive device includes a magnetization pinned layer, free nonmagnetic intermediate layer formed between the and electrodes allowing sense current to flow in direction substantially perpendicular plane of stack including layer. At least one is binary or ternary alloy represented by formula FeaCobNic (where a+b+c=100 at %, a≦75 b≦75 c≦63 %), an having body-centered cubic crystal structure.