Magneto-resistive element
作者： Akihiro Odagawa , Masayoshi Hiramoto , Kenji Iijima , Hiroshi Sakakima , Nozomu Matukawa
DOI:
关键词: Magnetic layer 、 Magneto 、 Current (fluid) 、 Perpendicular 、 Resistive element 、 Composite material 、 Materials science 、 Layer (electronics) 、 Intermediate layer 、 Electronic engineering
摘要: The present invention provides a vertical current-type magneto-resistive element. element includes an intermediate layer and pair of magnetic layers sandwiching the layer, at least one free pinned is multilayer film including non-magnetic layer. area defined by through which current flows perpendicular to not larger than 1000 μm2.
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