Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene
作者： L. S. Panchakarla , K. S. Subrahmanyam , S. K. Saha , Achutharao Govindaraj , H. R. Krishnamurthy
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摘要: Boron- and nitrogen-doped graphenes are prepared by the arc discharge between carbon electrodes or transformation of nanodiamond under appropriate atmospheres. Using a combination experiment theories based on first principles, systematic changes in carrier-concentration electronic structure doped demonstrated. Stiffening G-band mode intensification defect-related D-band Raman spectra also observed.
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