Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique
作者： Subhojyoti Sinha , Gourab Dutta , Ramanjaneyulu Mannam , Nandita DasGupta , M.S. Ramachandra Rao
DOI: 10.1016/J.APSUSC.2020.145496
关键词:
摘要: Abstract In this paper we report the detailed analysis of effect in-situ annealing on electrical properties yttrium stabilized zirconium oxide (YSZ) thin films grown by pulsed laser deposition silicon substrates. The optimized metal/YSZ/Si devices showed low leakage current, good dielectric strength and a breakdown field 4.13 MV/cm. magnitudes flat band voltage, interfacial charge density have been extracted from capacitance-voltage (C-V) characteristics MOS structure. C-V show small hysteresis which indicates presence traps. observed shift in voltage are explained with help X-ray photoelectron spectroscopy. From XPS depth profile samples it was found that as go surface to interface, oxygen concentration deposited film decreases, i.e. becomes rich. This has correlated properties.
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