Engineering of forming-free resistive switching characteristics in ZrO2 films
作者： Gang Du , Tao Li , Chao Wang , Bin Fang , Baoshun Zhang
DOI: 10.1088/0022-3727/48/22/225301
关键词:
摘要: The variation of forming-free resistive switching (RS) characteristics modulated by thermal annealing was investigated in ZrO2 films fabricated electron beam evaporation. A typical behavior with pristine resistance comparable to that the high state (HRS) observed as-deposited devices. Whereas, further reduced a initial even lower than low (LRS) after N2 ambient and larger ratio verified annealed Both devices exhibited stable bipolar RS without any forming step, which has great potential for memory applications. possible mechanism associated adjusting oxygen vacancy formation migration proposed explain these distinct behaviors. It is expected controllable improved device performance may be obtained optimizing distribution density vacancies via post-annealing.
harvard.edu
core.ac.uk
irgrid.ac.cn参考文章(32)
Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, D. L. Kwong, $\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity IEEE Electron Device Letters. ,vol. 32, pp. 566- 568 ,(2011) , 10.1109/LED.2011.2109033
Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, Hyunsang Hwang, Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory Applied Physics Letters. ,vol. 104, pp. 083507- ,(2014) , 10.1063/1.4866671
Wootae Lee, Jubong Park, Seonghyun Kim, Jiyong Woo, Jungho Shin, Daeseok Lee, Euijun Cha, Hyunsang Hwang, Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments Applied Physics Letters. ,vol. 100, pp. 142106- ,(2012) , 10.1063/1.3700730
Chih-Yang Lin, Sheng-Yi Wang, Dai-Ying Lee, Tseung-Yuen Tseng, Electrical Properties and Fatigue Behaviors of ZrO2 Resistive Switching Thin Films Journal of The Electrochemical Society. ,vol. 155, ,(2008) , 10.1149/1.2946430
Jung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, Woojin Jeon, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Min Hwan Lee, Cheol Seong Hwang, Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots Advanced Materials. ,vol. 25, pp. 1987- 1992 ,(2013) , 10.1002/ADMA.201204572
Chia-Chun Lin, Yung-Hsien Wu, Tung-Hsuan Hung, Chin-Yao Hou, Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiOx-based metal-insulator-metal devices Microelectronic Engineering. ,vol. 109, pp. 374- 377 ,(2013) , 10.1016/J.MEE.2013.03.016
Xiaoyi Yang, Shibing Long, Kangwei Zhang, Xiaoyu Liu, Guoming Wang, Xiaojuan Lian, Qi Liu, Hangbing Lv, Ming Wang, Hongwei Xie, Haitao Sun, Pengxiao Sun, Jordi Suñé, Ming Liu, Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology Journal of Physics D. ,vol. 46, pp. 245107- ,(2013) , 10.1088/0022-3727/46/24/245107
Berhanu Tulu, W. Z. Chang, Jinn P. Chu, S. F. Wang, Forming-free resistive switching characteristics of 15 nm-thick multicomponent oxide Applied Physics Letters. ,vol. 103, pp. 252904- ,(2013) , 10.1063/1.4852059
Doo Seok Jeong, Reji Thomas, RS Katiyar, JF Scott, H Kohlstedt, Adrian Petraru, Cheol Seong Hwang, Emerging memories: resistive switching mechanisms and current status Reports on Progress in Physics. ,vol. 75, pp. 076502- ,(2012) , 10.1088/0034-4885/75/7/076502
Leia Stirling, Karen Willcox, Philip Ferguson, Dava Newman, Kinetics and Kinematics for Translational Motions in Microgravity During Parabolic Flight Aviation, Space, and Environmental Medicine. ,vol. 80, pp. 522- 531 ,(2009) , 10.3357/ASEM.2356.2009