Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology
作者： Xiaoyi Yang , Shibing Long , Kangwei Zhang , Xiaoyu Liu , Guoming Wang
DOI: 10.1088/0022-3727/46/24/245107
关键词: Scale factor 、 Electrolyte 、 Equivalent series resistance 、 Initial phase 、 Voltage 、 Resistive random-access memory 、 Weibull distribution 、 Materials science 、 Optoelectronics 、 Reset (computing)
摘要: The RESET switching of bipolar Cu/HfO2/Pt resistance random access memory (RRAM) is investigated. With a statistical methodology, we systematically analyze the voltage (VRESET) and current (IRESET). VRESET shows U-shape distribution as function RON according to scatter plot raw experimental data. After data correction by series (RS), nearly constant, while IRESET decreases linearly with RCF. These behaviours are consistent thermal dissolution model RESET. Moreover, distributions strongly affected distribution. Using ?resistance screening? method, found be compatible Weibull model. slopes independent RCF, indicating that point corresponds initial phase conductive filament (CF) dissolution, our cell-based for unipolar RRAM devices. scale factor roughly 1/RCF. Accordingly, HfO2-based solid electrolyte mechanism, improving understanding on physics resistive
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