Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid
作者： A. Harada , H. Yamaoka , R. Ogata , K. Watanabe , K. Kinoshita
DOI: 10.1039/C5TC01127B
关键词:
摘要: Supplying a trace volume of ionic liquid, [bmim][Tf2N], which contains 5000 ppm H2O, on the HfO2 film in conducting-bridge random access memory composed Cu/HfO2/Pt allows improved efficiency properties: reduction operating voltage and prevention destruction electrolyte.
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