Effect of rare element Ce doping concentration on resistive switching of HfOx film

摘要: The switching characteristics of rare element Ce-doped HfOx films were investigated. effect Ce doping on oxygen defects was analyzed by X-ray photoelectron spectroscopy (XPS) and first-principle calculations. variations valence state vacancies with the increase concentration demonstrated. Although increased dopants-induced in film, density decreased as increased. Besides, introduction dopants enlarged difference electronegativity Hf O which made it harder for to escape from film under voltage. Hence behaviors affected multiple factors can be effectively improved an appropriate (4.3%). A physical model based formation rupture conductive filaments proposed clarify behavior samples.