Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid
作者： Kentaro Kinoshita , Atsushi Sakaguchi , Akinori Harada , Hiroki Yamaoka , Satoru Kishida
关键词: Programmable metallization cell 、 Ionic liquid 、 Dispersion (chemistry) 、 Layer (electronics) 、 Metal 、 Voltage 、 Chemical engineering 、 Oxygen 、 Diffusion 、 Materials science
摘要: A remarkable improvement of cycling endurance was achieved by the addition a trace amount an ionic liquid ([bmim][Tf2N]) containing Cu(Tf2N)2 to HfO2 layer conducting-bridge random access memory (CBRAM) with Cu/HfO2/Pt structure. The brought about significant dispersion set voltage and suppression generation migration oxygen vacancies owing smooth diffusion Cu ions in liquids.
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