Excellent selector performance in engineered Ag/ZrO2:Ag/Pt structure for high-density bipolar RRAM applications
作者： Chao Wang , Bing Song , Zhongming Zeng
DOI: 10.1063/1.5009717
关键词: Resistive random-access memory 、 Annealing (metallurgy) 、 Metal 、 Materials science 、 Dissolution 、 Surface energy 、 Platinum 、 Selectivity 、 Optoelectronics 、 Resistor
摘要: … of 4F 2 /n (F is the minimum feature size; n is the stacking layer number … /Si substrate through electron beam evaporation. Subsequently, a thick ZrO 2 film (80 nm) was grown at 150 o C …
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