Diode-like volatile resistive switching properties in amorphous Sr-doped LaMnO3 thin films under lower current compliance
作者： Dongqing Liu , Haifeng Cheng , Guang Wang , Xuan Zhu , Nannan Wang
DOI: 10.1063/1.4826362
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摘要: Amorphous Sr-doped LaMnO3 (a-LSMO) thin films can exhibit diode-like volatile resistive switching (RS) properties under lower compliance current (CC). The Ag/a-LSMO/Pt cell exhibits stable RS cycles up to 100 times with rectification ratio above 102. volatility depends strongly on the temperature as well CC-controlled dimension of Ag nanofilament forming in a-LSMO. conductive atomic force microscopy current-mapping images confirm instability conducting nanofilaments CC. behaviors could be explained by Rayleigh nanofilament, together diffusion atoms a-LSMO matrix. have great application potential beyond von-Neumann computers.
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