Realization of forming-free Ag/ZrO2-based threshold selector with high selectivity by optimizing film thickness and scaling down electrode size
作者： Chao Wang , Zhongming Zeng
DOI: 10.1063/1.5023015
关键词: Selectivity 、 Layer (electronics) 、 Optoelectronics 、 Realization (systems) 、 Materials science 、 Dielectric 、 Diffusion 、 Scaling 、 Platinum 、 Electrode
摘要: The influence of the switching layer thickness and device size on threshold characteristics has been investigated in Ag/ZrO2/Pt selector device. By optimizing thickness, excellent such as forming-free behavior, high selectivity good endurance was achieved. In addition, we revealed impact active metal electrode diffusion performance dielectric material scaled. A two-step set behavior also observed with 80 nm under a compliance current 1mA. Furthermore, increased highly by decreasing size. particular, about 2×108 when scaled down to 300 nm.
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