Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu/ZrO2/Pt devices

摘要: Coexistence of volatile and nonvolatile resistive switching characteristics in a single Cu/ZrO2/Pt device was demonstrated by controlling the current compliance (I CC). The grain boundaries as well increased amount oxygen vacancies polycrystalline ZrO2 films offer opportunity to reduce kinetics engineer dimension density conductive filaments (CFs). Only one CF with an atomic scale diameter formed when I CC lower, whereas this tiny unstable would be annihilated spontaneously applied voltage reduced zero, exhibiting typical property. size grew further increasing CC. Quantized conductance observed during process, corresponding atomic-size variation CF. However, robust multiple CFs were dominate totally behaviors large enough adopted. This work demonstrates feasibility modulating realize for high-density storage neuromorphic applications.