Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

作者: Hui-Chuan Liu , Xin-Gui Tang , Qiu-Xiang Liu , Yan-Ping Jiang , Wen-Hua Li

DOI: 10.1016/J.CERAMINT.2020.05.201

关键词:

摘要: Abstract In this work, TiO 2/ZrO 2 bilayer thin film was prepared on fluorine doped tin oxide (FTO)/glass substrates by using a simple and low-cost chemical solution deposition method …

参考文章(28)
Xianwen Sun, Linghong Ding, Guoqiang Li, Weifeng Zhang, None, Conversion of two types of bipolar switching induced by the electroforming polarity in Au/NiO/SrTiO 3 /Pt memory cells Applied Physics A. ,vol. 115, pp. 147- 151 ,(2014) , 10.1007/S00339-013-7837-6
D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U-In Chung, J. T. Moon, B. I. Ryu, Improvement of resistive memory switching in NiO using IrO2 Applied Physics Letters. ,vol. 88, pp. 232106- ,(2006) , 10.1063/1.2210087
Xinman Chen, Hong Zhou, Guangheng Wu, Dinghua Bao, Colossal resistive switching behavior and its physical mechanism of Pt/p-NiO/n-Mg0.6Zn0.4O/Pt thin films Applied Physics A. ,vol. 104, pp. 477- 481 ,(2011) , 10.1007/S00339-011-6290-7
Doo Seok Jeong, Reji Thomas, RS Katiyar, JF Scott, H Kohlstedt, Adrian Petraru, Cheol Seong Hwang, Emerging memories: resistive switching mechanisms and current status Reports on Progress in Physics. ,vol. 75, pp. 076502- ,(2012) , 10.1088/0034-4885/75/7/076502
J G Simmons, Conduction in thin dielectric films Journal of Physics D. ,vol. 4, pp. 613- 657 ,(1971) , 10.1088/0022-3727/4/5/202
Helge Wylezich, Hannes Mähne, Jura Rensberg, Carsten Ronning, Peter Zahn, Stefan Slesazeck, Thomas Mikolajick, Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films ACS Applied Materials & Interfaces. ,vol. 6, pp. 17474- 17480 ,(2014) , 10.1021/AM5021149
Tae-Geun Seong, Jin-Seong Kim, Kyung-Hoon Cho, Min Kyu Yang, Woong Kim, Jeon-Kook Lee, Ji Won Moon, Jaesung Roh, Sahm Nahm, Effects of Ambient Gas Pressure on the Resistance Switching Properties of the NiO Thin Films Grown by Radio Frequency Magnetron Sputtering Japanese Journal of Applied Physics. ,vol. 49, pp. 121103- ,(2010) , 10.1143/JJAP.49.121103
Fu-Chien Chiu, Wen-Chieh Shih, Jun-Jea Feng, Conduction mechanism of resistive switching films in MgO memory devices Journal of Applied Physics. ,vol. 111, pp. 094104- ,(2012) , 10.1063/1.4712628
Peter Mark, Wolfgang Helfrich, Space‐Charge‐Limited Currents in Organic Crystals Journal of Applied Physics. ,vol. 33, pp. 205- 215 ,(1962) , 10.1063/1.1728487
D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, W. Q. Zhang, Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag ∕ La 0.7 Ca 0.3 MnO 3 ∕ Pt heterostructures Physical Review B. ,vol. 73, pp. 245427- ,(2006) , 10.1103/PHYSREVB.73.245427