Towards engineering in memristors for emerging memory and neuromorphic computing: A review

作者: Haider Abbas , Changhwan Choi , Yawar Abbas , Andrey S. Sokolov

DOI: 10.1088/1674-4926/42/1/013101

关键词:

摘要: Resistive random-access memory (RRAM), also known as memristors, having a very simple device structure with two terminals, fulfill almost all of the fundamental requirements volatile memory, nonvolatile and neuromorphic characteristics. Its behaviors are currently being explored in relation to range materials, such biological perovskites, 2D transition metal oxides. In this review, we discuss different electrical exhibited by RRAM devices based on these materials briefly explaining their corresponding switching mechanisms. We then emergent technologies using together its potential applications, elucidating material engineering techniques used during fabrication improve performance devices, areas ION/IOFF ratio, endurance, spike time-dependent plasticity (STDP), paired-pulse facilitation (PPF), among others. The emulation essential synaptic functions realized various including inorganic oxides new organic well diverse structures single-layer multilayer hetero-structured crossbar arrays, is analyzed detail. Finally, current challenges future prospects for development materials-based memristors.

参考文章(182)
Ying-Chih Chen, Hsin-Chieh Yu, Chun-Yuan Huang, Wen-Lin Chung, San-Lein Wu, Yan-Kuin Su, Nonvolatile Bio-Memristor Fabricated with Egg Albumen Film Scientific Reports. ,vol. 5, pp. 10022- 10022 ,(2015) , 10.1038/SREP10022
M. Hansen, M. Ziegler, L. Kolberg, R. Soni, S. Dirkmann, T. Mussenbrock, H. Kohlstedt, A double barrier memristive device. Scientific Reports. ,vol. 5, pp. 13753- 13753 ,(2015) , 10.1038/SREP13753
Sen Song, Kenneth D. Miller, L. F. Abbott, Competitive Hebbian learning through spike-timing-dependent synaptic plasticity Nature Neuroscience. ,vol. 3, pp. 919- 926 ,(2000) , 10.1038/78829
Alejandro Strachan, Nicolas Christophe Orlando Onofrio, David M. Guzman, Stability and migration of small copper clusters in amorphous dielectrics Journal of Applied Physics. ,vol. 117, pp. 195702- ,(2015) , 10.1063/1.4921059
Haowei Zhang, Bin Gao, Bing Sun, Guopeng Chen, Lang Zeng, Lifeng Liu, Xiaoyan Liu, Jing Lu, Ruqi Han, Jinfeng Kang, Bin Yu, Ionic doping effect in ZrO2 resistive switching memory Applied Physics Letters. ,vol. 96, pp. 123502- ,(2010) , 10.1063/1.3364130
M. Prezioso, F. Merrikh-Bayat, B. D. Hoskins, G. C. Adam, K. K. Likharev, D. B. Strukov, Training and operation of an integrated neuromorphic network based on metal-oxide memristors Nature. ,vol. 521, pp. 61- 64 ,(2015) , 10.1038/NATURE14441
Niloufar Raeis Hosseini, Jang-Sik Lee, Biocompatible and Flexible Chitosan‐Based Resistive Switching Memory with Magnesium Electrodes Advanced Functional Materials. ,vol. 25, pp. 5586- 5592 ,(2015) , 10.1002/ADFM.201502592
Yuchao Yang, Bing Chen, Wei D. Lu, Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity. Advanced Materials. ,vol. 27, pp. 7720- 7727 ,(2015) , 10.1002/ADMA.201503202
Jae Sung Lee, Shinbuhm Lee, Tae Won Noh, Resistive switching phenomena: A review of statistical physics approaches Applied physics reviews. ,vol. 2, pp. 031303- ,(2015) , 10.1063/1.4929512