作者: Haider Abbas , Changhwan Choi , Yawar Abbas , Andrey S. Sokolov
DOI: 10.1088/1674-4926/42/1/013101
关键词:
摘要: Resistive random-access memory (RRAM), also known as memristors, having a very simple device structure with two terminals, fulfill almost all of the fundamental requirements volatile memory, nonvolatile and neuromorphic characteristics. Its behaviors are currently being explored in relation to range materials, such biological perovskites, 2D transition metal oxides. In this review, we discuss different electrical exhibited by RRAM devices based on these materials briefly explaining their corresponding switching mechanisms. We then emergent technologies using together its potential applications, elucidating material engineering techniques used during fabrication improve performance devices, areas ION/IOFF ratio, endurance, spike time-dependent plasticity (STDP), paired-pulse facilitation (PPF), among others. The emulation essential synaptic functions realized various including inorganic oxides new organic well diverse structures single-layer multilayer hetero-structured crossbar arrays, is analyzed detail. Finally, current challenges future prospects for development materials-based memristors.