Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance
作者： Xiaodi Wei , Hong Huang , Cong Ye , Wei Wei , Hao Zhou
DOI: 10.1016/J.JALLCOM.2018.10.249
关键词:
摘要: … N incorporation into ZrO 2 -based RRAM on the V O properties … voltage and operating voltage in RRAM devices. Furthermore, … into ZrO 2 -based RRAM improves the performance of the …
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