Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
作者： Chao-Feng Liu , Xin-Gui Tang , Lun-Quan Wang , Hui Tang , Yan-Ping Jiang
DOI: 10.3390/NANO9081124
关键词: Materials science 、 Thin film 、 Monoclinic crystal system 、 Annealing (metallurgy) 、 Resistive random-access memory 、 Analytical chemistry 、 Chemical state 、 X-ray photoelectron spectroscopy 、 Sol-gel 、 Mica
摘要: The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially HfO2 films. A novel Au/HfO2/Pt/mica random access memory device was prepared by a sol-gel process, and Au/HfO2/Pt/Ti/SiO2/Si (100) also for comparison. thin were grown into the monoclinic phase proper annealing process at 700 °C, demonstrated grazing-incidence X-ray diffraction patterns. ratio high/low resistance (off/on) reached 1000 50 two devices, respectively, being relatively stable former but not latter. great difference in ratios devices may caused different concentrations oxygen defect obtained photoelectron spectroscopy spectra indicating composition chemical state conduction mechanism dominated Ohm's law low state, while high Ohmic conduction, space charge limited (SCLC), trap-filled SCLC conducted together.
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