作者: D.F Guillou , S Santhanam , L.R Carley
DOI: 10.1016/S0924-4247(00)00374-5
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摘要: Abstract We present a micro-machining technology which enables MEMS fabrication on standard CMOS with very dense electrical/mechanical integration. Micro-mechanical structures are fabricated alongside circuits 0.5-μm 3-metal dice using four maskless dry-etch steps. The resulting laminated beams made of metal and dielectric layers. Multi-conductor mechanical can carry multiple signals for actuation sensing. Narrow vertical lateral gaps enable efficient XYZ electrostatic fine capacitive position Experiments show that be integrated 1.5 μm away from signal-processing circuits, in low parasitics, good system performance, small die size.