Free-volume defects investigation of GeS 2 -Ga 2 S 3 -CsI chalcogenide glasses by positron annihilation spectroscopy
作者： Junpeng Li , Guoxiang Wang , Changgui Lin , Tengyu Zhang , Rui Zhang
DOI: 10.1016/J.INFRARED.2017.04.012
关键词:
摘要: Abstract The transformation behavior of free-volume defect in (80GeS2-20Ga2S3)100-x (CsI)x (x = 0, 5, 10, 15 mol%) chalcogenide glasses was studied by employing positron annihilation spectroscopic technique, which could reveal valuable information for in-depth understanding nano-structural defects glassy matrix. results indicate that the structural changes caused CsI additives can be adequately described trapping modes determined with two-state model. initial addition (x = 5 mol%) led to a void contraction, whereas, agglomeration occurred increase and were obviously reduced. atomic density ρ is inversely proportional number these defects. Meanwhile, UV cut-off edge shifts toward short-wavelength increasing CsI. This study provides evolution GeS2-Ga2S3-CsI glasses.
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