Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

作者: K. K. Banger , Y. Yamashita , K. Mori , R. L. Peterson , T. Leedham

DOI: 10.1038/NMAT2914

关键词:

摘要: … metal oxide semiconducting thin-films using a ‘sol–gel on chip’ hydrolysis approach from soluble metal … 1 s −1 , reproducible and stable turn-on voltages V on ≈0 V and high operational …

参考文章(27)
David Mitzi, None, Solution Processing of Inorganic Materials John Wiley & Sons, Inc.. ,(2008) , 10.1002/9780470407790
C. Jeffrey Brinker, George W. Scherer, Sol-Gel Science: The Physics and Chemistry of Sol-Gel Processing ,(1990)
Tze-Ching Fung, Chiao-Shun Chuang, Charlene Chen, Katsumi Abe, Robert Cottle, Mark Townsend, Hideya Kumomi, Jerzy Kanicki, Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors Journal of Applied Physics. ,vol. 106, pp. 084511- ,(2009) , 10.1063/1.3234400
Ramamoorthy Ramesh, Darrell G. Schlom, Whither Oxide Electronics Mrs Bulletin. ,vol. 33, pp. 1006- 1014 ,(2008) , 10.1557/MRS2008.220
Kazumi Kato, Can Zheng, Jeffrey M. Finder, Sandwip K. Dey, Yasuyoshi Torii, Sol‐Gel Route to Ferroelectric Layer‐Structured Perovskite SrBi2Ta2O9 and SrBi2Nb2O9 Thin Films Journal of the American Ceramic Society. ,vol. 81, pp. 1869- 1875 ,(2005) , 10.1111/J.1151-2916.1998.TB02559.X
N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, D. A. Keszler, Transparent thin-film transistors with zinc indium oxide channel layer Journal of Applied Physics. ,vol. 97, pp. 064505- ,(2005) , 10.1063/1.1862767
Jong Han Jeong, Hui Won Yang, Jin-Seong Park, Jae Kyeong Jeong, Yeon-Gon Mo, Hye Dong Kim, Jaewon Song, Cheol Seong Hwang, Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors Electrochemical and Solid State Letters. ,vol. 11, ,(2008) , 10.1149/1.2903209
Jin-Seong Park, Jae Kyeong Jeong, Hyun-Joong Chung, Yeon-Gon Mo, Hye Dong Kim, Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water Applied Physics Letters. ,vol. 92, pp. 072104- ,(2008) , 10.1063/1.2838380
Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature. ,vol. 432, pp. 488- 492 ,(2004) , 10.1038/NATURE03090