Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility.

摘要: Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro nanoscale patterns. The directional DUV beam avoids the substrate heating suppresses diffraction effect. A IGZO also developed fulfill requirements for direct photopatterning achieving semi-conducting properties with thermal annealing at moderate temperature. DUV-induced crosslinking of starting material allows channels in thin-film transistors but it improves field-effect mobility surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry AFM effect on final structure is discussed. irradiation step results photolysis a partial condensation inorganic network that freezes sol-gel layer homogeneous distribution, lowering possibilities thermally induced reorganization atomic scale. Laser high-resolution high-enough mobility, which enables easy fabrication oxide nanowires applications solar cell, display, flexible electronics, biomedical sensors.