作者: Xingqiang Liu , Wei Liu , Xiangheng Xiao , Chunlan Wang , Zhiyong Fan
DOI: 10.1039/C3NR34222K
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摘要: Here we report the fabrication and characterization of high mobility amorphous ZnMgO/single-walled carbon nanotube composite thin film transistors (TFTs) with a tunable threshold voltage. By controlling ratio MgO, ZnO nanotubes, performance TFTs can be obtained field-effect up to 135 cm2 V−1 s−1, low voltage 1 V subthreshold swing as small 200 mV per decade, making it promising new solution-processed material for functional circuits. A inverter is demonstrated frequency exceeding 5 kHz, which only limited by parasitic capacitance rather than intrinsic speed. The overall device greatly surpasses not that TFTs, but also conventional or polycrystalline silicon TFTs. It therefore has potential open avenue high-performance, flexible electronics could significantly impact existing applications, enable whole generation flexible, wearable, disposable electronics.