High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage

作者: Xingqiang Liu , Wei Liu , Xiangheng Xiao , Chunlan Wang , Zhiyong Fan

DOI: 10.1039/C3NR34222K

关键词:

摘要: Here we report the fabrication and characterization of high mobility amorphous ZnMgO/single-walled carbon nanotube composite thin film transistors (TFTs) with a tunable threshold voltage. By controlling ratio MgO, ZnO nanotubes, performance TFTs can be obtained field-effect up to 135 cm2 V−1 s−1, low voltage 1 V subthreshold swing as small 200 mV per decade, making it promising new solution-processed material for functional circuits. A inverter is demonstrated frequency exceeding 5 kHz, which only limited by parasitic capacitance rather than intrinsic speed. The overall device greatly surpasses not that TFTs, but also conventional or polycrystalline silicon TFTs. It therefore has potential open avenue high-performance, flexible electronics could significantly impact existing applications, enable whole generation flexible, wearable, disposable electronics.

参考文章(44)
Li Ding, Shibo Liang, Tian Pei, Zhiyong Zhang, Sheng Wang, Weiwei Zhou, Jie Liu, Lian-Mao Peng, Carbon nanotube based ultra-low voltage integrated circuits: Scaling down to 0.4 V Applied Physics Letters. ,vol. 100, pp. 263116- ,(2012) , 10.1063/1.4731776
Naoto Umezawa, Motoyuki Sato, Kenji Shiraishi, Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study Applied Physics Letters. ,vol. 93, pp. 223104- ,(2008) , 10.1063/1.3040306
K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, H. Sirringhaus, Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process Nature Materials. ,vol. 10, pp. 45- 50 ,(2011) , 10.1038/NMAT2914
Jae Chul Park, Sang Wook Kim, Chang Jung Kim, Ho-Nyeon Lee, The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors IEEE Electron Device Letters. ,vol. 33, pp. 809- 811 ,(2012) , 10.1109/LED.2012.2192710
R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, E. Fortunato, Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors Journal of Applied Physics. ,vol. 101, pp. 044505- ,(2007) , 10.1063/1.2495754
Jun Young Choi, SangSig Kim, Sang Yeol Lee, Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistors Thin Solid Films. ,vol. 520, pp. 3774- 3777 ,(2012) , 10.1016/J.TSF.2011.10.212
Christophe Avis, Youn Goo Kim, Jin Jang, Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors Journal of Materials Chemistry. ,vol. 22, pp. 17415- 17420 ,(2012) , 10.1039/C2JM33054G
L. Francioso, M. Russo, A.M. Taurino, P. Siciliano, Micrometric patterning process of sol–gel SnO2, In2O3 and WO3 thin film for gas sensing applications: Towards silicon technology integration Sensors and Actuators B-chemical. ,vol. 119, pp. 159- 166 ,(2006) , 10.1016/J.SNB.2005.12.006
Xingqiang Liu, Chunlan Wang, Bo Cai, Xiangheng Xiao, Shishang Guo, Zhiyong Fan, Jinchai Li, Xiangfeng Duan, Lei Liao, None, Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors. Nano Letters. ,vol. 12, pp. 3596- 3601 ,(2012) , 10.1021/NL3012648