Low-temperature, high-performance, solution-processed indium oxide thin-film transistors.
作者： Seung-Yeol Han , Gregory S. Herman , Chih-hung Chang
DOI: 10.1021/JA104864J
关键词:
摘要: Solution-processed In2O3 thin-film transistors (TFTs) were fabricated by a spin-coating process using metal halide precursor, InCl3, dissolved in acetonitrile. A thin and uniform film can be controlled formed adding ethylene glycol. The synthesized films annealed at various temperatures ranging from 200 to 600 °C air or an O2/O3 atmospheric environment. TFTs 500 under exhibited high field-effect mobility of 55.26 cm2 V−1 s−1 Ion/Ioff current ratio 107. atmosphere 300 excellent n-type transistor behaviors with mobilities 0.85−22.14 ratios 105−106. annealing elevates solution-processed higher performance lower processing temperature.
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