Growth and characterization of high density stoichiometric SiO2 dot arrays on Si through an anodic porous alumina template

摘要: In this work, we present the fabrication and full characterization of stoichiometric SiO2 nanoisland arrays (dots) on silicon, grown through an anodic porous alumina template. Atomic force transmission electron microscopy (AFM, TEM) were used to characterize morphology, size, size distribution density dots as a function anodization time used. It was found that dot is lower for very short times, it stabilizes after certain time. The height increases rapidly nucleation, reaching values 8–10 nm. With prolonged oxidation continue nucleate fill available area silicon surface underneath alumina, while well developed grow in width, saturation at 14 55 nm respectively. X-ray photoelectron spectroscopy (XPS) energy loss (EELS) investigate stoichiometry coverage dots.