Optical emission from silicon-based SiO2 islands fabricated by anodic alumina templates
作者： GS Huang , XL Wu , YF Mei , P Chen , Paul K Chu
DOI: 10.1063/1.1767980
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摘要: We have investigated the photoluminescence spectra of silicon-based nanoscale SiO2 islands obtained by anodization aluminum membranes in a 0.3m sulfuric acid solution under constant voltage 25V. Two ultraviolet emission bands were observed at 290 and 370nm. After annealing samples 900°C O2, 290nm band vanishes, but 370nm still exists. suggest that originates from optical transition E′ centers according to its behavior. The is considered be Al-related luminescence centers, [AlO4]0, because decrease intensity agreement with amount Al ion impurities located islands. This work shows clear understanding light-emitting mechanism island array. result can expected important applications modem optoelectronics.
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