Chemical mechanical polishing slurry and process for ruthenium films
作者： Jae Kim , Sang Lee
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摘要: A CMP slurry for ruthenium and a polishing process using the same. In technology below 0.1 μm, when capacitor (Ba1−xSrx)TiO3 film as dielectric is fabricated, used to polish deposited lower electrode according process. The performed by slurry, improve speed of under low pressure. addition, an one-step one kind slurry. As result, defects on insulating are reduced property improved, thereby simplifying
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