Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof

摘要: The semiconductor memory device includes an interlevel dielectric pattern and adhesive pattern, wherein both the patterns include a contact hole to expose substrate. sufficiently adheres lower electrode of capacitor thus prevents damage during formation capacitor. A conductive plug is disposed within may project higher than top surface pattern. leakage current preventive formed on layer from directly contacting prevent occurrences current. electrically connected plug.