Semiconductor devices having a contact plug and fabrication methods thereof
作者： Oh-seong Kwon , Yong-Suk Tak , Ki-chul Kim , Wan-Don Kim , Jin-Yong Kim
DOI:
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摘要: Provided are a semiconductor device and method of fabricating the same. The includes an insulating layer that is formed on supporting has contact hole. A first plug inner wall bottom second buries hole plug. conductive connected to thickness thicker than
lens.org 参考文章(21)
Wan-Don Kim, Cha-young Yoo, Seok-jun Won, Jin-Won Kim, Metal-insulator-metal capacitor ,(2001)
Cha-young Yoo, Seok-jun Won, Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof ,(2002)
Bruce E. White, Robert Edwin Jones, Method for forming semiconductor device including a dual inlaid structure ,(1997)
Peter S. Kirlin, Paul McIntryre, Scott R. Summerfelt, Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same ,(1997)
Cem Basceri, Gurtej S. Sandhu, Dielectric cure for reducing oxygen vacancies ,(2003)
Chang-won Lee, Seong-Geon Park, Sang-Bom Kang, Gil-heyun Choi, Integrated circuit device contact plugs having a liner layer that exerts compressive stress thereon and methods of manufacturing same ,(2002)
Kuo-Yuh Yang, Ching-ming Lee, Yu-Ju Yang, Yu-Hong Huang, Method for forming capacitor of a dram having a wall protection structure ,(2001)
Kuo-Tai Huang, Wen-Yi Hsieh, Tri-Rung Yew, Method of fabricating DRAM capacitor ,(1998)
Chang-Rock Song, Method of fabricating capacitor having hafnium oxide ,(2002)
Kee Jeung Lee, Dong Jun Kim, Method for fabricating a capacitor for a semiconductor device ,(2000)